| |
Silicon technology
leadership
Quality system based on
ISO9001:2000
Provide world class
quality product
Continuous quality
improvement
Satisfy customer by
exceeding their expectation
Well trained human
resource
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 |
 MCL-Product
Specification Capabilities: |
| Paramter |
100mm |
125mm |
150mm |
| Growth
Method |
CZ |
CZ |
CZ |
| Dopant |
P，P+；Boron |
P，P+；Boron |
P，P+；Boron |
| |
N，N+；
Phosphorus, Antimony |
N，N+；
Phosphorus, Antimony |
N，N+；
Phosphorus, Antimony |
| Orientation |
1-0-0，+/-1degree |
1-0-0，+/-1degree |
1-0-0，+/-1degree |
| |
1-1-1，+/-1degree |
1-1-1，+/-1degree |
1-1-1，+/-1degree |
| |
1-1-0，+/-1degree |
1-1-0，+/-1degree |
1-1-0，+/-1degree |
| Flat
Orientation |
+/-0.5degree |
+/-0.5degree |
+/-0.5degree |
| Resistivity |
P:>/=0.001 |
P:>/=0.001 |
P:>/=0.001 |
| |
N:>/=0.01(P) |
N:>/=0.01(P) |
N:>/=0.01(P) |
| |
>/=0.008(Sb) |
>/=0.008(Sb) |
>/=0.008(Sb) |
| Resistivity
Radial Gradient(RRG) |
P,P+:6%(C-1/2R) |
P,P+:6%(C-1/2R) |
P,P+:6%(C-1/2R) |
| |
P,P+:8%(C-6mm) |
P,P+:8%(C-6mm) |
P,P+:8%(C-6mm) |
| |
N,N+(1-0-0):8%(C-1/2R) |
N,N+(1-0-0):8%(C-1/2R) |
N,N+(1-0-0):8%(C-1/2R) |
| |
N,N+(1-0-0):12%(C-6mm) |
N,N+(1-0-0):12%(C-6mm) |
N,N+(1-0-0):12%(C-6mm) |
| |
N(1-1-1):18%(C-1/2R) |
N(1-1-1):18%(C-1/2R) |
N(1-1-1):18%(C-1/2R) |
| |
N(1-1-1):22%(C-6mm) |
N(1-1-1):22%(C-6mm) |
N(1-1-1):22%(C-6mm) |
| |
N+(1-1-1):20%(C-1/2R) |
N+(1-1-1):20%(C-1/2R) |
N+(1-1-1):20%(C-1/2R) |
| |
N+(1-1-1):35%(C-6mm) |
N+(1-1-1):35%(C-6mm) |
N+(1-1-1):35%(C-6mm) |
| Oxygen
Content |
Target+/-1.5ppm |
Target+/-1.5ppm |
Target+/-1.5ppm |
|
Medium |
Medium |
Medium |
|
12-19ppm(New
ASTM) |
12-19ppm(New
ASTM) |
12-19ppm(New
ASTM) |
| Oxygen
Radial Gradient(ORG) |
5%
Max |
5%
Max |
5%
Max |
| Carbon
Content |
0.5ppma
Max |
0.5ppma
Max |
0.5ppma
Max |
| Metal
of Bulk |
5*1010
atoms/cm3 Max |
5*1010
atoms/cm3
Max |
5*1010
atoms/cm3
Max |
| Metal
of Surface |
5*1010
atoms/cm2
Max |
5*1010
atoms/cm2
Max |
5*1010
atoms/cm2
Max |
| EPD |
None |
None |
None |
| Oxygen
Induced Stacking Faults(OISF) |
P:50/cm2
Max |
P:50/cm2
Max |
P:50/cm2
Max |
| |
N:100/cm2
Max |
N:100/cm2
Max |
N:100/cm2
Max |
| Diameter
Control |
Target+/-0.2mm |
Target+/-0.2mm |
|
| Global
TIR |
3.0
Microns Max |
3.0
Microns Max |
3.0
Microns Max |
| Global
TTV |
6.0
Microns Max |
6.0
Microns Max |
6.0
Microns Max |
| STIR(20*20,
100%) |
2.0
Microns Max |
2.0
Microns Max |
2.0
Microns Max |
| Warp |
30
Microns Max |
30
Microns Max |
30
Microns Max |
| Bow |
30
Microns Max |
30
Microns Max |
30
Microns Max |
| Thickness |
Target+/-15Microns |
Target+/-15Microns |
Target+/-15Microns |
| Front
side Particle |
0.2Microns
20Max/Wafer |
0.2Microns
20Max/Wafer |
0.2Microns
10Max/Wafer |
| |
0.3Microns
10Max/Wafer |
0.3Microns
10Max/Wafer |
0.3Microns
10Max/Wafer |
| |
0.5Microns
1 Max/Wafer |
0.5Microns
1 Max/Wafer |
0.5Microns
1 Max/Wafer |
| Defects
of Front Side |
None |
None |
None |
| Wafer
Backside |
Acid
etched(No mechanical defect) |
Acid
etched(No mechanical defect) |
Acid
etched(No mechanical defect) |
| |
SBSD(Fog-free) |
SBSD(Fog-free) |
SBSD(Fog-free) |
| Laser
Marking |
Hard
Laser Marking |
Hard
Laser Marking |
Hard
Laser Marking |
| Manufacturing
Cycle Time |
16
days |
16
days |
16
days |
| |
Ingot:8
days |
Ingot:8
days |
Ingot:8
days |
| |
Polished
wafers: 8 days |
Polished
wafers:8 days |
Polished
wafers:8 days |
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